Abstract:Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

Stable and reliable IGZO resistive switching device with HfAlOx interfacial layer

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Improved Uniformity Of Resistive Switching Behaviors In Hfo2 Thin Films With Embedded Al Layers

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Modulation of Resistive Switching Behavior of HfOx Film by Embedding a Thin Al Buffer Layer

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

Stable resistive switching characteristics of ZrO2-based memory device with low-cost

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Improved Resistive Switching Stability of Pt/ZnO/CoO X /zno/pt Structure for Nonvolatile Memory Devices

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

Resistive Switching Behavior of Hafnium Oxide Thin Film Grown by Magnetron Sputtering

Improved Resistive Switching Performance and Realized Electric Control of Exchange Bias in a NiO/HfO2 Bilayer Structure.

Bipolar Resistive Switching with Self-Rectifying Behaviors in P-Type AgCr1−xMgxO2 Thin Films