Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

Improved Uniformity Of Resistive Switching Behaviors In Hfo2 Thin Films With Embedded Al Layers

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Improving the High Resistance State Retention Degradation of Al-Doped HfOx Based on Ab Initio Simulations

Resistive Switching of Hfo2 Based Flexible Memories Fabricated by Low Temperature Atomic Layer Deposition

Well Controlled Multiple Resistive Switching States in the Al Local Doped Hfo2 Resistive Random Access Memory Device

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Improvement of Resistive Switching Uniformity for Tio2-Based Memristive Devices by Introducing A Thin Hfo2 Layer

Stable and reliable IGZO resistive switching device with HfAlOx interfacial layer

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

The Temperature Dependence in Nanoresistive Switching of HfAlO

Improving HfO 2 -Based Resistive Switching Devices by Inserting a TaO x Thin Film via Engineered In Situ Oxidation

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Enhanced Resistive Switching Characteristics in Al2O3 Memory Devices by Embedded Ag Nanoparticles.

Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Improved Resistive Switching Performance and Realized Electric Control of Exchange Bias in a NiO/HfO2 Bilayer Structure.

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory