Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

The Temperature Dependence in Nanoresistive Switching of HfAlO

The critical temperature regions in resistive switching

Study of resistive switching behavior in HfO2 nanocrystals synthesized via a low temperature hydrothermal method

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

Improved Uniformity Of Resistive Switching Behaviors In Hfo2 Thin Films With Embedded Al Layers

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

Temperature Instability of Resistive Switching on $ \hbox{hfo}_{x}$ -Based RRAM Devices

Resistive Switching of Hfo2 Based Flexible Memories Fabricated by Low Temperature Atomic Layer Deposition

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Well Controlled Multiple Resistive Switching States in the Al Local Doped Hfo2 Resistive Random Access Memory Device

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Metallic to Hopping Conduction Transition in Ta2O5−x/TaOy Resistive Switching Device

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation.

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Improving the High Resistance State Retention Degradation of Al-Doped HfOx Based on Ab Initio Simulations

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices