Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Temperature Instability of Resistive Switching on $ \hbox{hfo}_{x}$ -Based RRAM Devices

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer

Bias Temperature Instability of Binary Oxide Based ReRAM

Temperature Dependence of Resistive Switching Behavior in $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ -Based RRAM Devices

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

The Temperature Dependence in Nanoresistive Switching of HfAlO

Al2O3/HfO2 Functional Stack Films Based Resistive Switching Memories with Controlled SET and RESET Voltages

The critical temperature regions in resistive switching

Pulse Voltage Dependent Resistive Switching Behaviors of HfO2-based RRAM

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Voltage and Power-Controlled Regimes in the Progressive Unipolar Reset Transition of Hfo2-Based Rram