Abstract:Quantitative measurements reveal high concentrations of hydrogen across many Redox‐based resistive random access memory (ReRAM) devices, exceeding critical thresholds. Secondary Ion Mass Spectrometry confirms that this hydrogen diffuses across the reactive interface under electrical biasing, indicating a significant impact on resistive switching. These findings highlight the necessity of incorporating hydrogen dynamics into ReRAM models and the importance of precise impurity control during fabrication to optimize device performance. Previous research on transistor gate oxides reveals a clear link between hydrogen content and oxide breakdown. This has implications for redox‐based resistive random access memory (ReRAM) devices, which exploit soft, reversible, dielectric breakdown, as hydrogen is often not considered in modeling or measured experimentally. Here quantitative measurements, corroborated across multiple techniques are reported, that reveal ReRAM devices, whether manufactured in a university setting or research foundry, contain concentrations of hydrogen at levels likely to impact resistance switching behavior. To the knowledge this is the first empirical measurement depth profiling hydrogen concentration through a ReRAM device. Applying a recently‐developed Secondary Ion Mass Spectrometry analysis technique enables to measure hydrogen diffusion across the interfaces of SiOx ReRAM devices as a result of operation. These techniques can be applied to a broad range of devices to further understand ReRAM operation. Careful control of temperatures, precursors, and exposure to ambient during fabrication should limit hydrogen concentration. Additionally, using thin oxynitride or TiO2 capping layers should prevent diffusion of hydrogen and other contaminants into devices during operation. Applying these principles to ReRAM devices will enable considerable, informed, improvements in performance.

Bias Temperature Instability of Binary Oxide Based ReRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

Temperature Instability of Resistive Switching on $ \hbox{hfo}_{x}$ -Based RRAM Devices

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Temperature Biased Characteristics and Mechanism Analysis of a Cu_xSi_yO Resistive RAM

Thermal impact on the resistance switching properties in tantalum oxide based RRAM

Study on High-Resistance State Instability of TaOx-Based RRAM

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Temperature Dependence of Resistive Switching Behavior in $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ -Based RRAM Devices

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

The Role of Hydrogen in ReRAM

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory

A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

Conduction mechanisms, dynamics and stability in ReRAMs

Self-compliance Pt/HfO2/Ti/Si One-Diode–one-resistor Resistive Random Access Memory Device and Its Low Temperature Characteristics

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices