Temperature Dependence of Resistive Switching Behavior in $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ -Based RRAM Devices

Kai Sun,Bo Peng,Lei Yuan,Jiangang Yu,Yuming Zhang,Renxu Jia

DOI: https://doi.org/10.1109/ted.2024.3484348

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:This study comprehensively analyzes the resistive switching behavior of $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ -based resistive random access memory (RRAM) devices under varying temperatures, a critical aspect for data storage and in-memory computing applications. Our results demonstrate that $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ exhibits resistive switching at temperatures up to 225 $^\circ$ C, maintaining their low resistive state (LRS) and data retention for 30 min below 175 $^\circ$ C. We investigate the conduction mechanisms at elevated temperatures and examine the factors underlying performance degradation, through a combination of experimental observations and first-principles calculations. We find that the current in the high resistive state increases with temperature, attributed to enhanced thermionic emission and Schottky barrier degradation, which leads to a degradation in the resistive state ratio. At 225 $^\circ$ C, we observed a shift in the LRS, indicating a departure from the conduction mechanism induced by the conductive filament. This shift is associated with the increased displacement of oxygen vacancies in the crystal, as revealed by our time-dependent density functional theory simulations. Our research indicates that below 225 $^\circ$ C, the degradation of the RRAM device’s resistive state ratio primarily results from the reduction of the metal-gallium oxide Schottky barrier rather than changes in the oxygen vacancy conductive filaments. This reveals that $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ as a compelling choice for the application in RRAM devices where thermal endurance is crucial.