Abstract:RRAM, utilizing ALD, assures efficient and stable resistance switching in sub‐10 nm devices. This review highlights the technological advantages of ALD and delves into the impact of ALD on the microscopic resistive mechanisms, the switching films, and the electrodes. ALD‐driven RRAM is poised to revolutionize information storage and neural networks, offering smaller, faster, and more reliable memory solutions. Resistive random‐access memory (RRAM) stands out as a promising memory technology due to its ease of operation, high speed, affordability, exceptional stability, and potential to enable smaller memory devices with sizes under 10 nm. This has drawn significant attention, with atomic layer deposition (ALD) emerging as an ideal technology to tackle the challenges of nanoscale fabrication in the micro‐ and nanomanufacturing industry. ALD offers technological advantages such as functional multiple‐layer stacking, doping capabilities, and incorporating oxygen reservoirs or reactive layers. These factors contribute to achieving more intriguing, stable, and reliable nonvolatile resistance switching behaviors in RRAM. Specifically, ALD greatly benefits RRAM, that relies on the valence change mechanism, where high‐k transition metal oxides are commonly used as switching materials, and precise control over oxygen vacancies is achievable. This review provides a comprehensive overview of ALD films used in RRAM, delves into resistive switching properties and microscopic mechanisms in binary and ternary oxides and nitrides, and explores the impact of ALD‐prepared electrodes. Furthermore, the current status and future prospects of ALD‐based RRAM are highlighted, which is poised to catalyze further advancements in the fields of information storage and neural networks.

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

CuAg/Al 2 O 3 /cuag Threshold Switching Selector for RRAM Applications

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

A TaOx Based Threshold Switching Selector for the RRAM Crossbar Array Memory

Study of Conduction and Switching Mechanisms in Al/Alox/Wox/W Resistive Switching Memory for Multilevel Applications

Highly uniform bipolar resistive switching with Al2}O 3 buffer layer in robust NbAlO-based RRAM

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array

Flexible Cation-Based Threshold Selector for Resistive Switching Memory Integration

Al2O3/HfO2 Functional Stack Films Based Resistive Switching Memories with Controlled SET and RESET Voltages

1S1R Device with Self-Compliance Property for High Density Cross-Point Memory Applications

Probing Resistive Switching in HfO2/Al2O3 Bilayer Oxides Using In-Situ Transmission Electron Microscopy

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Atomic Layer Deposition Films for Resistive Random‐Access Memories

3-D Cross-Point Array Operation on -Based Vertical Resistive Switching Memory

Resistive Switching Characteristics of Resistive Random Access Memory Based on a Ba X Sr 1-X TiO 3 Thin Film Grown by a Hydrothermal Method

Impact of resistive switching parameters on resistive random access memory crossbar arrays

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM