Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

Temperature Instability of Resistive Switching on $ \hbox{hfo}_{x}$ -Based RRAM Devices

Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer

Statistical Temperature Coefficient Distribution in Analog RRAM Array: Impact on Neuromorphic System and Mitigation Method

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Thermal Stability and Data Retention of Resistive Random Access Memory with Hfox/Zno Double Layers

Suppression of Relaxation Effect in HfO2 Resistive Random Access Memory Array by Improved Program Operations

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Bias Temperature Instability of Binary Oxide Based ReRAM

Temperature Dependence of Resistive Switching Behavior in $\alpha$ -Ga $_\text{2}$ O $_\text{3}$ -Based RRAM Devices

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction.

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention.

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Temperature Dependence of Resistive Switching Behavior in α-Ga2O3-Based RRAM Devices

Improved Performance of HfxZnyO‐Based RRAM and Its Switching Characteristics Down to 4 K Temperature

Thermally Stable Transparent Resistive Random Access Memory Based on All‐Oxide Heterostructures

Impact of Programming Process on Temperature Coefficient in Analog RRAM.