Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Suppression of Relaxation Effect in HfO2 Resistive Random Access Memory Array by Improved Program Operations

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Relaxation Effect in RRAM Arrays: Demonstration and Characteristics

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Optimization of uniformity in resistive switching memory by reducing thermal effect

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

The Impact of Thermal Enhance Layers on the Relaxation Effect in Analog RRAM

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory

Effects of Different Dopants on Switching Behavior of HfO2-based Resistive Random Access Memory

Performance Improvement by Stack Structure in Flexible Resistive Random Access Memory

An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: when Hafnium Meets ITO in an Electrode.