Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Optimization of uniformity in resistive switching memory by reducing thermal effect

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Suppression of Relaxation Effect in HfO2 Resistive Random Access Memory Array by Improved Program Operations

Improving Resistance Uniformity and Endurance of Resistive Switching Memory by Accurately Controlling the Stress Time of Pulse Program Operation

Uniformity Improvement of Al-doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Improved Resistive Switching Uniformity in $ \hbox{cu/hfo}_{2}/\hbox{pt}$ Devices by Using Current Sweeping Mode

Presetting Conductive Pathway Induced the Switching Uniformity Evolution of A-Sinx:H Resistive Switching Memory.

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

An overview of the switching parameter variation of RRAM

Investigation on the mechanism and a universal structural design method for Resistive Switching devices

Statistical characteristics of reset switching in Cu/HfO 2 /Pt resistive switching memory