Abstract:Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Investigation of the Forming Program Failture in 1T1R Structure

Uniformity Improvements of Low Current 1T1R RRAM Arrays Through Optimized Verification Strategy

Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration

Optimization of uniformity in resistive switching memory by reducing thermal effect

Voltage driving or current driving: Which is preferred for RRAM programming?

A Novel Programming Method for Multilevel RRAM Based on Pulse Width Modulation

Optimization Of Writing Scheme On 1t1r Rram To Achieve Both High Speed And Good Uniformity

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure

Design and Implementation of RRAM Voltage Supply Circuits

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array with Stacked 1D2R RRAM Array

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

An overview of the switching parameter variation of RRAM

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

A Parallel Multibit Programing Scheme with High Precision for RRAM-Based Neuromorphic Systems

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array