Abstract:With decreasing die size and the ability to store multiple bits in a single cell, resistive random access memory (ReRAM) can be used to increase storage density, making it a promising technology for the next generation of memory. However, multi-level write operations suffer from impairments such as large latency, high energy consumption, and reliability issues. In this paper, we study different mechanisms affecting the "multi-level incremental step pulse with verify algorithm" (M-ISPVA) on a 1-transistor-1-resistor (1T1R) model in transient simulation at the component and the circuit level with focus on resistance control and energy consumption during the entire process of state transitions. By dividing the M-ISPVA into a triggering and a controlling period, we discovered the transistor to operate in the ohmic region during the triggering period as a voltage-controlled resistance and in the saturation region during the controlling period as a voltage-controlled current limiter. Controlling the gate voltage in the triggering period can move the triggering point to a desired write voltage and in the controlling period can increase or decrease resistance steps per pulse to attain a desired speed of resistance change. In addition, the major energy portion is consumed for reset operation during triggering and for set operation during the controlling period. To optimize write performance, extra precaution must be taken when defining resistance states with target read-out current and gate voltage with the focus on evenly balanced latencies between all transitions. A direct multi-level write operation shows 67.5 % latency and 62.5 % energy saving compared to indirect ones, but suffers from only unidirectional control, making it non-feasible. In case of a 4 k bit memory, the more reliable M-ISPVA faces almost 37 % higher latency and energy compared to the basic ISPVA.

Optimization Of Writing Scheme On 1t1r Rram To Achieve Both High Speed And Good Uniformity

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Uniformity Improvements of Low Current 1T1R RRAM Arrays Through Optimized Verification Strategy

Modulation Effect of Reducing Time on Switching Speed in AlOx/WOx RRAM

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

Improving Resistance Uniformity and Endurance of Resistive Switching Memory by Accurately Controlling the Stress Time of Pulse Program Operation

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

ReRAM Write Circuit with Dynamic Uniform and Small Overshoot Compliance Current under PVT Variations.

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Operation-oriented solution to boost key performance of RRAM

A Novel Programming Method for Multilevel RRAM Based on Pulse Width Modulation

Technology and circuit optimization of resistive RAM for low-power, reproducible operation

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

A 16 Mb Rram Test Chip Based on Analog Power System with Tunable Write Pulses

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

Probabilistic design methodology to improve run-time stability and performance of STT-RAM caches

Design and Implementation of RRAM Voltage Supply Circuits

Optimization of uniformity in resistive switching memory by reducing thermal effect

Optimizing multi-level ReRAM memory for low latency and low energy consumption

Optimization Strategy for Accelerating Multi-Bit Resistive Weight Programming on the RRAM Array