Abstract:For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique qualities like low power consumption, high integration potential, durability, and CMOS compatibility. Using RRAMs to imitate the more analog storage behavior of brain synapses is also a promising strategy for further improving memory density and power efficiency. However, RRAM devices display strong stochastic behavior, together with relaxation effects, making it more challenging to precisely control their multi-level storage capability. To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance current during write operations and/or programming voltage amplitudes. Here, we present a new fully digital relaxation-aware method for tuning the conductance of analog RRAMs. The method is based on modulating digital pulse widths during erase operations while keeping other parameters fixed, and therefore requires no precise alterations to analog parameters like compliance currents or programming voltage amplitudes. Experimental results, with and without relaxation effect awareness, on a 64 RRAM 1T1R HfOx memory array of cells, fabricated in 130nm CMOS technology, indicate that it is possible to obtain 2-bit memory per cell multi-value storage at the array level, verified 1000 seconds after programming.

Optimization Strategy for Accelerating Multi-Bit Resistive Weight Programming on the RRAM Array

A Parallel Multibit Programing Scheme with High Precision for RRAM-Based Neuromorphic Systems

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Fast and Accurate Weight Updating Strategy for Resistive Random-Access Memory (Rram)-Based Neural Networks

Device and circuit optimization of RRAM for neuromorphic computing

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

A Fast Weight Control Strategy for Programmable Linear RAM Based on the Self-Calibrating Erase Operation

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

Write or Not: Programming Scheme Optimization for RRAM-based Neuromorphic Computing

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

EFFICIENT WEIGHT MAPPING SCHEME WITHOUT VERIFICATION FOR RRAM BASED NEUROMORPHIC COMPUTING

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

On-Chip Write & Verify and Endurance Enhancer Circuits Towards Multi-level RRAM Array

Weighted Synapses Without Carry Operations for RRAM-Based Neuromorphic Systems

Hardware Implementation Of Rram Based Binarized Neural Networks

ASAP: an Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell

Online Training on RRAM Based Neuromorphic Network: Experimental Demonstration and Operation Scheme Optimization