Abstract:Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. Low ON-state resistance of filamentary RRAM devices further increases the energy consumption due to high-current read and write operations, and limits the array size and parallel multiply & accumulate operations. High-forming voltages needed for filamentary RRAM are not compatible with advanced CMOS technology nodes. To address all these challenges, we developed a forming-free and bulk switching RRAM technology based on a trilayer metal-oxide stack. We systematically engineered a trilayer metal-oxide RRAM stack and investigated the switching characteristics of RRAM devices with varying thicknesses and oxygen vacancy distributions across the trilayer to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching operation at megaohm regime with high current nonlinearity and programmed up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars by combining energy-efficient switched-capacitor voltage sensing circuits with differential encoding of weights to experimentally demonstrate high-accuracy matrix-vector multiplication. We showcased the computational capability of bulk RRAM crossbars by implementing a spiking neural network model for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

Robustness of Neuromorphic Computing with RRAM-based Crossbars and Optical Neural Networks.

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

A Study of the Effect of RRAM Reliability Soft Errors on the Performance of RRAM-Based Neuromorphic Systems

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Fast and Accurate Weight Updating Strategy for Resistive Random-Access Memory (Rram)-Based Neural Networks

Device and circuit optimization of RRAM for neuromorphic computing

Impacts of State Instability and Retention Failure of Filamentary Analog RRAM on the Performance of Deep Neural Network

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO 2 -Based RRAM and Applications for Pattern Recognition

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

Online Training on RRAM Based Neuromorphic Network: Experimental Demonstration and Operation Scheme Optimization

A Novel Programming Method for Multilevel RRAM Based on Pulse Width Modulation

Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits

Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

TaOx Synapse Array Based on Ion Profile Engineering for High Accuracy Neuromorpic Computing

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

Relaxation Signal Analysis and Optimization of Analog Resistive Random Access Memory for Neuromorphic Computing

Write or Not: Programming Scheme Optimization for RRAM-based Neuromorphic Computing

Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

An RRAM Retention Prediction Framework Using a Convolutional Neural Network Based on Relaxation Behavior