Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

Zhizhen Yu,Zongwei Wang,Jian Kang,Yichen Fang,Yishao Chen,Yimao Cai,Ru Huang
DOI: https://doi.org/10.1109/led.2020.2986889
IF: 4.8157
2020-01-01
IEEE Electron Device Letters
Abstract:In this letter, a new reliability phenomenon, named early-stage resistance fluctuation (ERF), in analog resistive random-access memory (RRAM) devices and its impact on the neuromorphic computing are investigated. ERF is found to be a non-negligible random fluctuation behavior of RRAM resistance within similar to 10,000s after verification due to stochastic migration of vacancies. As a result, ERF can induce weight noise in RRAM-based neural network even with write-verify operation and cause a significant (similar to 42%) drop of recognition accuracy on the MNIST dataset recognition tasks. An approach incorporating automatic early-stop and dropout during training is proposed to reduce the impacts of ERF. Results show that the recognition accuracy with ERF can be improved from 58% to 96% after adopting the proposed optimization method.
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