Device and Materials Requirements for Neuromorphic Computing
Raisul Islam,Haitong Li,Pai-Yu Chen,Weier Wan,Hong-Yu Chen,Bin Gao,Huaqiang Wu,Shimeng Yu,Krishna Saraswat,H-S Philip Wong
DOI: https://doi.org/10.1088/1361-6463/aaf784
2019-01-01
Journal of Physics D Applied Physics
Abstract:Energy efficient hardware implementation of artificial neural network is challenging due the memory-wall bottleneck. Neuromorphic computing promises to address this challenge by eliminating data movement to and from off-chip memory devices. Emerging non-volatile memory devices that exhibit gradual changes in resistivity are a key enabler of in-memory computing - a type of neuromorphic computing. In this paper, we present a review of some of the non-volatile memory devices (RRAM, CBRAM, PCM) commonly used in neuromorphic application. The review focuses on the trade-off between device parameters such as retention, endurance, device-to-device variation, speed and resistance levels, and the interplay with target applications. This work aims at providing guidance for finding the optimized resistive memory devices material stack suitable for neuromorphic application.