Abstract:Resistive random access memory (RRAM), a new non-volatile memory, enables hardware accelerators based on in-memory computing with improved throughput and energy efficiency, enabling machine learning on-the-fly inference at the edge. However, sneak-path currents in RRAM crossbar arrays (CBAs) can cause crosstalk, limiting high-density applications. The best choice for suppressing leakage current is self-rectifying RRAM (SRR). Interface-type RRAMs offer CMOS compatibility, better controllability, higher reliability, and lower power consumption compared to filament-type counterparts. However, while there is much research on the filament-type RRAMs, there is little research and no measurement validation on the interface-type RRAMs. In this paper, a compact model of the interface-type RRAM is developed for circuit and system exploration. The model includes Schottky barrier diode, effective layer resistance, nano-battery effect, parasitic resistance, and capacitance. It also has a dynamic behavior model, including device-to-device variation, retention, and endurance. Compared with measurements, it reproduces high accuracy of 98.97% in DC and 98.05% in AC. The proposed model is applied to a neuromorphic $64\times64$ SRR CBA with 32-bit fixed-point precision. A nano-battery bias scheme is also proposed to zero the current of RRAMs having non-zero I-V crossing points, reducing the sneak-pass current error to 0.02%. A vector matrix multiplication application demonstrates 3.44 TOPS/W with a 50:50 LRS to HRS ratio, and a deep neural network on a VGG-8 architecture using the CIFAR-10 dataset observes an accuracy degradation of 1.36%.

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

A Compact Model of Analog RRAM for Neuromorphic Computing System Design

Robustness of Neuromorphic Computing with RRAM-based Crossbars and Optical Neural Networks.

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

A Compact Model of Analog RRAM Considering Temperature Coefficient for Neural Network Evaluation

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

Neuromorphic Computing Based on Resistive RAM.

Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

Compact Reliability Model of Analog RRAM for Computation-in-Memory Device-to-System Codesign and Benchmark

Modeling and Signal Integrity Analysis of RRAM-Based Neuromorphic Chip Crossbar Array Using Partial Equivalent Element Circuit (PEEC) Method

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

Device and circuit optimization of RRAM for neuromorphic computing

Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk

Reliability Perspective on Neuromorphic Computing Based on Analog RRAM

Investigation of Non-Linear Selection Effect on RRAM Based Neuromorphic Computing Array with Passive Selective Element

Atomic-Device Hybrid Modeling of Relaxation Effect in Analog RRAM for Neuromorphic Computing

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model