Abstract:Resistive random access memory (RRAM), a new non-volatile memory, enables hardware accelerators based on in-memory computing with improved throughput and energy efficiency, enabling machine learning on-the-fly inference at the edge. However, sneak-path currents in RRAM crossbar arrays (CBAs) can cause crosstalk, limiting high-density applications. The best choice for suppressing leakage current is self-rectifying RRAM (SRR). Interface-type RRAMs offer CMOS compatibility, better controllability, higher reliability, and lower power consumption compared to filament-type counterparts. However, while there is much research on the filament-type RRAMs, there is little research and no measurement validation on the interface-type RRAMs. In this paper, a compact model of the interface-type RRAM is developed for circuit and system exploration. The model includes Schottky barrier diode, effective layer resistance, nano-battery effect, parasitic resistance, and capacitance. It also has a dynamic behavior model, including device-to-device variation, retention, and endurance. Compared with measurements, it reproduces high accuracy of 98.97% in DC and 98.05% in AC. The proposed model is applied to a neuromorphic $64\times64$ SRR CBA with 32-bit fixed-point precision. A nano-battery bias scheme is also proposed to zero the current of RRAMs having non-zero I-V crossing points, reducing the sneak-pass current error to 0.02%. A vector matrix multiplication application demonstrates 3.44 TOPS/W with a 50:50 LRS to HRS ratio, and a deep neural network on a VGG-8 architecture using the CIFAR-10 dataset observes an accuracy degradation of 1.36%.

A Compact Model of Analog RRAM Considering Temperature Coefficient for Neural Network Evaluation

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Robustness of Neuromorphic Computing with RRAM-based Crossbars and Optical Neural Networks.

Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

Impact of Programming Process on Temperature Coefficient in Analog RRAM.

A Compact Model of Analog RRAM for Neuromorphic Computing System Design

Statistical Temperature Coefficient Distribution in Analog RRAM Array: Impact on Neuromorphic System and Mitigation Method

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits

Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network

Device Variation Effects on Neural Network Inference Accuracy in Analog In‐Memory Computing Systems

Device and circuit optimization of RRAM for neuromorphic computing

A Compact Model for Relaxation Effect in Analog RRAM for Computation-in-Memory System Design and Benchmark

A flexible and fast digital twin for RRAM systems applied for training resilient neural networks

Hardware Implementation Of Rram Based Binarized Neural Networks

A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk

A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode