Impact of Programming Process on Temperature Coefficient in Analog RRAM.

Siyao Yang,Bin Gao,Jianshi Tang,Feng Xu,Peng Yao,He Qian,Huaqiang Wu
DOI: https://doi.org/10.1109/icicdt59917.2023.10332405
2023-01-01
Abstract:The thermal stability of analog resistive random access memory (RRAM) poses limitations on the accuracy of neuromorphic computing. In this work, we investigated the temperature-dependent conductance drift of $HfO_{x}$-based analog RRAM, which is characterized by the statistical distribution of the temperature coefficient. Additionally, we explore the impact of the programming process on the temperature coefficient. To evaluate the accuracy of MNIST tasks under different programming processes, a convolutional neural network based on the RRAM model is utilized.
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