Abstract:For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique qualities like low power consumption, high integration potential, durability, and CMOS compatibility. Using RRAMs to imitate the more analog storage behavior of brain synapses is also a promising strategy for further improving memory density and power efficiency. However, RRAM devices display strong stochastic behavior, together with relaxation effects, making it more challenging to precisely control their multi-level storage capability. To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance current during write operations and/or programming voltage amplitudes. Here, we present a new fully digital relaxation-aware method for tuning the conductance of analog RRAMs. The method is based on modulating digital pulse widths during erase operations while keeping other parameters fixed, and therefore requires no precise alterations to analog parameters like compliance currents or programming voltage amplitudes. Experimental results, with and without relaxation effect awareness, on a 64 RRAM 1T1R HfOx memory array of cells, fabricated in 130nm CMOS technology, indicate that it is possible to obtain 2-bit memory per cell multi-value storage at the array level, verified 1000 seconds after programming.

A Methodology to Improve Linearity of Analog RRAM for Neuromorphic Computing

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

A Physics-Based Analytic Model of Analog Switching Resistive Random Access Memory

Suppress Variations Of Analog Resistive Memory For Neuromorphic Computing By Localizing V-O Formation

Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications

Atomic-Device Hybrid Modeling of Relaxation Effect in Analog RRAM for Neuromorphic Computing

A Compact Model of Analog RRAM for Neuromorphic Computing System Design

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Impact of Programming Process on Temperature Coefficient in Analog RRAM.

Device and circuit optimization of RRAM for neuromorphic computing

Statistical Temperature Coefficient Distribution in Analog RRAM Array: Impact on Neuromorphic System and Mitigation Method

Investigation of Statistical Retention of Filamentary Analog RRAM for Neuromophic Computing

Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Impact of Ta/Ti Electrodes on Linearities of TaO X -Based Resistive Random-Access Memories for Neuromorphic Computing

Oxide-based filamentary RRAM for deep learning

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory