Abstract:Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. Low ON-state resistance of filamentary RRAM devices further increases the energy consumption due to high-current read and write operations, and limits the array size and parallel multiply & accumulate operations. High-forming voltages needed for filamentary RRAM are not compatible with advanced CMOS technology nodes. To address all these challenges, we developed a forming-free and bulk switching RRAM technology based on a trilayer metal-oxide stack. We systematically engineered a trilayer metal-oxide RRAM stack and investigated the switching characteristics of RRAM devices with varying thicknesses and oxygen vacancy distributions across the trilayer to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching operation at megaohm regime with high current nonlinearity and programmed up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars by combining energy-efficient switched-capacitor voltage sensing circuits with differential encoding of weights to experimentally demonstrate high-accuracy matrix-vector multiplication. We showcased the computational capability of bulk RRAM crossbars by implementing a spiking neural network model for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints.

Suppress Variations Of Analog Resistive Memory For Neuromorphic Computing By Localizing V-O Formation

Reliable Memristor-based Neuromorphic Design Using Variation- and Defect-Aware Training

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Origin and suppressing methodology of intrinsic variations in metal-oxide RRAM based synaptic devices

A Methodology to Improve Linearity of Analog RRAM for Neuromorphic Computing

Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory

Atomic-Device Hybrid Modeling of Relaxation Effect in Analog RRAM for Neuromorphic Computing

Intensive harmonized synapses with amorphous Cu2O-based memristive using ultrafine Cu nanoparticle sublayers formed via atomically controlled Electrochemical Pulse Deposition

Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching

Statistical Temperature Coefficient Distribution in Analog RRAM Array: Impact on Neuromorphic System and Mitigation Method

Device Variation Effects on Neural Network Inference Accuracy in Analog In‐Memory Computing Systems

Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Oxide-based filamentary RRAM for deep learning