An overview of the switching parameter variation of RRAM
Meiyun Zhang,Shibing Long,Guoming Wang,Yang Li,Xiaoxin Xu,Hongtao Liu,Ruoyu Liu,Ming Wang,Congfei Li,Pengxiao Sun,Haitao Sun,Qi Liu,Hangbing Lü,Ming Liu
DOI: https://doi.org/10.1007/s11434-014-0673-z
2014-01-01
Chinese Science Bulletin
Abstract:Resistive random access memory (RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the NiO- and HfO 2 -based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed.