Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Investigation of Conductance Fluctuations of Analog RRAM During Weight Update Process with Kinetic Monte Carlo Simulation

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM

Impact and Quantization of Short-Term Relaxation Effect in Analog RRAM

Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Investigation of forming process for metal oxide-based resistive switching memory by stochastic simulation

Investigation of the large variability of HfO2‐based ReRAM devices with a small current compliance by a kinetic Monte Carlo model

Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

A Kinetic Monte Carlo Study on the Dynamic Switching Properties of Electrochemical Metallization RRAMs During the SET Process

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

An overview of the switching parameter variation of RRAM

Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations