Abstract:Many resistive switching memory devices are based on the formation of a small-area conducting filament (CF). Understanding the conduction and switching properties of the CFs is crucial for their industrial application. In this work we report electrical evidence of atomic-size effects in metal-insulator-metal structures showing memory switching. In particular, we report the observation of abrupt changes of the order of the quantum of conductance Go=2e 2/h during the RESET transition of Pt/HfO2/Pt structures. Statistical analysis of the CF conductance during the RESET experiments further confirm the appearance of preferred atomic-size configurations of the CF with a well-defined structure of conductance peaks of the order of Go. Based on these results, we suggest that the quantum of conductance represents a natural boundary between the ON and OFF resistive switching CF states. Temperature dependence of the conduction as a function of the CF conductance further supports this conclusion. Once again, our results emphasize the atomic-scale size of the CF constrictions and the need to use first-principle calculations and molecular dynamic simulations to understand key aspects related to performance and reliability. First-principle calculations performed in both crystalline and amorphous HfO2 confirm that one dimensional paths of oxygen vacancies can support quantum transport channels and might give rise to the experimental results. On the other extreme of the modeling hierarchy, a compact model for the CF conduction based on the quantum point contact concept is shown to provide good fitting of the CF conduction both in the ON and the OFF states, further supporting the quantum-wire picture. © 2012 IEEE.

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Statistical Characteristics of Reset Switching in Cu/HfO2/Pt Resistive Switching Memory

Study of the Set Statistical Characteristics in the Cu/Hfo2/Pt-Based Rram Device

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Voltage and Power-Controlled Regimes in the Progressive Unipolar Reset Transition of Hfo2-Based Rram

An In-Depth Simulation Study of Thermal Reset Transitions in Resistive Switching Memories

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Compact Analytical Models for the SET and RESET Switching Statistics of RRAM Inspired in the Cell-Based Percolation Model of Gate Dielectric Breakdown

An overview of the switching parameter variation of RRAM

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Confirmation Of Filament Dissolution Behavior By Analyzing Electrical Field Effect During Reset Process In Oxide-Based Rram

Electrical evidence of atomic-size effects in the conduction filament of RRAM

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices

Analysis of Nano-Filament Evolution in Ni-based RRAM Devices Using In-Situ TEM