Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Investigation of forming process for metal oxide-based resistive switching memory by stochastic simulation

Stochastic simulation of forming SET and RESET process for transition metal oxide-based resistive switching memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Physics-Based Stochastic Three-Dimensional Modeling for Metal–Oxide Resistive Random Access Memory

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by Kmc Simulation

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

An overview of the switching parameter variation of RRAM

Simulation Method for Forming and Switching Processes of NbO2-based Selector

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array