Ultrahigh Uniformity and Stability in NbO x -Based Selector for 3-D Memory by Using Ru Electrode
Xiaohu Zhao,Ao Chen,Jie Ji,Dingjun Wu,Yi Gan,Cong Wang,Guokun Ma,Chih-Yang Lin,Chun-Chu Lin,Nengfan Liu,Houzhao Wan,Li Tao,Baoyuan Wang,Ting-Chang Chang,Hao Wang
DOI: https://doi.org/10.1109/ted.2021.3063327
IF: 3.1
2021-05-01
IEEE Transactions on Electron Devices
Abstract:In this article, we demonstrate a high-performance Pt/NbO<sub>x</sub>/Ru selector based on metal–insulator transition (MIT), which exhibits low leakage current ( $5.67times 10^{-{5}},,text{A}/$ cm<sup>2</sup>), excellent endurance (>10<sup>6</sup>), and ultrahigh uniformity (<2.5%) in particular and performs great potential to achieve 3-D storage integration. Furthermore, the decrease of the threshold voltage drift and the improvement of stability can be interpreted as the formation of RuO<sub>2</sub> layer at the interface between Ru electrode and oxide layer. The application of Ru in selector provides the industry with a choice to enhance the uniformity and stability.
engineering, electrical & electronic,physics, applied