Abstract:Abstract Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2− x systems such as HfO 2− x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

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Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

A Kinetic Monte Carlo Study on the Dynamic Switching Properties of Electrochemical Metallization RRAMs During the SET Process

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory Via a Universal Monte Carlo Simulator

Stochastic simulation of forming SET and RESET process for transition metal oxide-based resistive switching memory

Investigation of forming process for metal oxide-based resistive switching memory by stochastic simulation

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Simulation Study of Switching Mechanism in Carbon-Based Resistive Memory with Molecular Dynamics and Extended Hückel Theory-based NEGF Method

Atomistic Study Of Dynamics For Metallic Filament Growth In Conductive-Bridge Random Access Memory

Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

An In-Depth Description of Bipolar Resistive Switching in Cu/HfOx/Pt Devices, a 3D Kinetic Monte Carlo Simulation Approach

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

A Study of Copper Oxide Based Resistive Switching Memory by Conductive Atom Force Microscope

An In-Depth Simulation Study of Thermal Reset Transitions in Resistive Switching Memories

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices

Resistive Switching in Memristive Electrochemical Metallization Devices

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices