Abstract:We report the fabrication of KCu7S₄/CuxO/Au devices with interfacial CuxO layers of different thicknesses through the spontaneous oxidation of Cu film during deposition. Deposition was conducted with an electron-beam evaporation system under the deposition rate and the chamber pressure of 0.1 Å s-1 and 9.8×10-3 Pa, respectively. X-ray diffraction and X-ray photoelectron spectroscopy characterizations reveal that the interfacial CuxO layers mostly comprise Cu₂O and CuO. Electrical characterization reveals that the devices exhibit remarkably thickness-dependent resistive switching behavior. After undergoing an electroforming process under a high compliant current of 1000 μA, the KCu7S₄/16 nm CuxO/Au device exhibits stable bipolar resistive switching behavior with the set voltage of 0.58 V and reset voltage of -0.21 V, whereas the KCu7S₄/32 nm CuxO/Au device only shows a hysteresis loop in the forward voltage regime. These findings are ascribed to the existence of high-insulation CuO, which is difficult to be softly broken down. Therefore, the depositional condition of Cu film and the thickness of the interfacial layer should be appropriately controlled for the effective performance of devices with Cu electrodes. The results may also provide guidance for the improvement of the performance and stability of Cu-based nonvolatile memory devices.

A Study of Copper Oxide Based Resistive Switching Memory by Conductive Atom Force Microscope

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Mechanism For Resistive Switching In An Oxide-Based Electrochemical Metallization Memory

Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell

Temperature and Electrode-Size Dependences of the Resistive Switching Characteristics of CuOx Thin Films

Nonpolar Electrical Switching Behavior in Cu–Si(Cu)Ox–Pt Stacks

Stable Nonpolar Resistive Switching Characteristics in Cu/Cu-dispersed ZrO2/Pt Memory Devices

Resistive Memory Switching of <formula formulatype="inline"><tex>$\hbox{Cu}_{x}\hbox{O}$ </tex></formula> Films for a Nonvolatile Memory Application

Study on Resistive Switching Characteristics and Mechanisms of Cu/SiOx/TiN Structure Resistive Random Access Memory

Endurance Enhancement Of Cu-Oxide Based Resistive Switching Memory With Al Top Electrode

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

Rectifying Switching Characteristics of Pt/ZnO/Pt Structure Based Resistive Memory.

Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structure

Resistive Memory Switching Of Cuxo Films For A Nonvolatile Memory Application

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Thickness-Dependent Resistive Switching Behavior of KCu7S₄/CuxO/Au Device

Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7ca0.3mno3 Thin Film Memory Devices

Charge Transport and Bipolar Switching Mechanism in a Cu/HfO 2 /pt Resistive Switching Cell

Highly Improved Resistive Switching Performances of the Self-Doped Pt/HfO 2 :Cu/cu Devices by Atomic Layer Deposition