Physics-Based Stochastic Three-Dimensional Modeling for Metal–Oxide Resistive Random Access Memory

Siyuan Chen

DOI: https://doi.org/10.1109/ted.2021.3082099

IF: 3.1

2021-07-01

IEEE Transactions on Electron Devices

Abstract:In this work, a fully physics-based stochastic 3-D modeling of metal–oxide-based resistive random access memory (RRAM) device has been conducted. In contrast to general 1-D or 2-D modeling of RRAM devices, 3-D modeling is able to provide a picture of the evolution of the 3-D random distributions of oxygen vacancies and temperature inside the device during the forming and SET/RESET processes. The modeling confirms that a tunneling gap between the top electrode (TE) which serves as an oxygen ion reservoir and the tip of the conductive filament may form at a high resistive state, which is assumed in the frequently used compact models of RRAM devices. The modeling shows that the sites with high temperature are concentrated in a cylindrical region at the center of the RRAM device, running from the inert bottom electrode to the TE. The modeling can reproduce both typical current-voltage characteristics of metal–oxide RRAM devices in forming and RESET and SET operations under a dc voltage sweep and the modulation of RRAM conductance by SET/RESET pulses.

engineering, electrical & electronic,physics, applied