Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.

Device and SPICE modeling of RRAM devices.

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Modeling and Design Optimization of ReRAM.

Device Simulation and Modeling of RRAM Switching Processes

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Compact Analytical Models for the SET and RESET Switching Statistics of RRAM Inspired in the Cell-Based Percolation Model of Gate Dielectric Breakdown

3D Vertical RRAM Array and Device Co-design with Physics-based Spice Model

A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode

Physics-Based Stochastic Three-Dimensional Modeling for Metal–Oxide Resistive Random Access Memory

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array