Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

Conduction Investigation In Oxide-Based Resistive Random Access Memory With Low Frequency Noise Analysis

Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Microscopic Origin of Read Current Noise in TaOx-based Resistive Switching Memory by Ultra-Low Temperature Measurement

Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM

Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis

Impact and Quantization of Short-Term Relaxation Effect in Analog RRAM

Investigation of Conductance Fluctuations of Analog RRAM During Weight Update Process with Kinetic Monte Carlo Simulation

An overview of the switching parameter variation of RRAM

Process-variation- and random-dopant-induced static noise margin fluctuation in nanoscale CMOS and FinFET SRAM cells

RTN Impacts on RRAM-based Nonvolatile Logic Circuit

Operation methods of resistive random access memory

Evaluation of SRAM V-min Shift Induced by Random Telegraph Noise (RTN): Physical Understanding and Prediction Method

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Characteristics of Low Frequency Noise in N<sup>+</sup>si-Hfo<inf>2</inf>-ni Resistive Random Access Memory

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Relaxation Signal Analysis and Optimization of Analog Resistive Random Access Memory for Neuromorphic Computing

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement