Abstract:For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique qualities like low power consumption, high integration potential, durability, and CMOS compatibility. Using RRAMs to imitate the more analog storage behavior of brain synapses is also a promising strategy for further improving memory density and power efficiency. However, RRAM devices display strong stochastic behavior, together with relaxation effects, making it more challenging to precisely control their multi-level storage capability. To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance current during write operations and/or programming voltage amplitudes. Here, we present a new fully digital relaxation-aware method for tuning the conductance of analog RRAMs. The method is based on modulating digital pulse widths during erase operations while keeping other parameters fixed, and therefore requires no precise alterations to analog parameters like compliance currents or programming voltage amplitudes. Experimental results, with and without relaxation effect awareness, on a 64 RRAM 1T1R HfOx memory array of cells, fabricated in 130nm CMOS technology, indicate that it is possible to obtain 2-bit memory per cell multi-value storage at the array level, verified 1000 seconds after programming.

Relaxation Signal Analysis and Optimization of Analog Resistive Random Access Memory for Neuromorphic Computing

Identifying Relaxation and Random Telegraph Noises in Filamentary Analog RRAM for Neuromorphic Computing

Impact and Quantization of Short-Term Relaxation Effect in Analog RRAM

Robustness of Neuromorphic Computing with RRAM-based Crossbars and Optical Neural Networks.

A Compact Model for Relaxation Effect in Analog RRAM for Computation-in-Memory System Design and Benchmark

The Impact of Thermal Enhance Layers on the Relaxation Effect in Analog RRAM

Atomic-Device Hybrid Modeling of Relaxation Effect in Analog RRAM for Neuromorphic Computing

Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

A Study of the Effect of RRAM Reliability Soft Errors on the Performance of RRAM-Based Neuromorphic Systems

An RRAM Retention Prediction Framework Using a Convolutional Neural Network Based on Relaxation Behavior

Optimized Programming Scheme Enabling Symmetric Conductance Modulation in HfO₂ Resistive Random-Access Memory (RRAM) for Neuromorphic Systems

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

Device and circuit optimization of RRAM for neuromorphic computing

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

Reliability Perspective on Neuromorphic Computing Based on Analog RRAM

A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

Enhance the Robustness to Time Dependent Variability of ReRAM-Based Neuromorphic Computing Systems with Regularization and 2R Synapse

Intra-array Non-Idealities Modeling and Algorithm Optimization for RRAM-based Computing-in-Memory Applications

Reliability of analog resistive switching memory for neuromorphic computing

Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition

Neuromorphic Computing Based on Resistive RAM.