Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

RTN Impacts on RRAM-based Nonvolatile Logic Circuit

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Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Evaluation of SRAM V-min Shift Induced by Random Telegraph Noise (RTN): Physical Understanding and Prediction Method

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Impact of RTN and Variability on RRAM-Based Neural Network

Random Telegraph Noise Analysis In Alox/Woy Resistive Switching Memories

Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Exploring the Impact of Random Telegraph Noise-Induced Accuracy Loss on Resistive RAM-Based Deep Neural Network

Random Telegraph Noise on the Threshold Voltage of Multi-Level Flash Memory

Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

Impact of the Interconnection Structure on RRAM-Based Crossbar Array in Neuromorphic Chip

Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Statistical analysis of random telegraph noise in digital circuits

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

A Low Cost and High Reliability True Random Number Generator Based on Resistive Random Access Memory

Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model