Abstract:We present a unique compact model for oxide memristors, based upon the concentration of oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen vacancy concentration is similar in effect to the reduction (expansion) of the tunnel gap used as a state variable in existing compact models, providing a mechanism for the electronic current to increase (decrease) based upon the polarity of the applied voltage. Rate equations defining the dynamics of state variables are obtained from simplifications of a recent manuscript in which electronic processes (i.e., electron capture/emission) were combined with atomic processes (i.e., Frenkel pair generation/recombination, diffusion) stemming from the thermochemical model of dielectric breakdown. Central to the proposed model is the effect of the electron occupancy of oxygen vacancy traps on resistive switching dynamics. The electronic current is calculated considering Ohmic, band-to-band, and bound-to-band contributions. The model includes uniform self-heating with Joule-heating and conductive loss terms. The model is calibrated using experimental current-voltage characteristics for HfO2 memristors with different electrode materials. Though a general model is presented, a delta-shaped density of states profile for oxygen vacancies is found capable of accurately representing experimental data while providing a minimal description of bound to band transitions. The model is implemented in Verilog-A and tested using read/write operations in a 4x4 1T1R nonvolatile memory array to evaluate its ability to perform circuit simulations of practical interest. A particular benefit is that the model does not make strong assumptions regarding filament geometry of which scant experimental-evidence exists to support.

Investigation of the large variability of HfO2‐based ReRAM devices with a small current compliance by a kinetic Monte Carlo model

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Current Compliance Impact on the Variability of HfO2-based RRAM Devices

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices

Investigation of Conductance Fluctuations of Analog RRAM During Weight Update Process with Kinetic Monte Carlo Simulation

Modeling and Design Optimization of ReRAM.

A Fluctuation Model for RRAMs Based on HfO2 Material

Conduction mechanisms, dynamics and stability in ReRAMs

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

A Compact Model for the Set Parameter Variations of Oxide Rram Array

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: A phase field study

Memristor Compact Model with Oxygen-Vacancy Concentration as State Variable

Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

An overview of the switching parameter variation of RRAM