Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Current Compliance Impact on the Variability of HfO2-based RRAM Devices

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Study of the Set Statistical Characteristics in the Cu/Hfo2/Pt-Based Rram Device

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

An overview of the switching parameter variation of RRAM

Statistical characteristics of reset switching in Cu/HfO 2 /Pt resistive switching memory

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

Investigation of the large variability of HfO2‐based ReRAM devices with a small current compliance by a kinetic Monte Carlo model

Influence of Selector-Introduced Compliance Current on Hfox Rram Switching Operation

Identification and application of current compliance failure phenomenon in RRAM device

Compact Analytical Models for the SET and RESET Switching Statistics of RRAM Inspired in the Cell-Based Percolation Model of Gate Dielectric Breakdown

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array

Set Statistics in Conductive Bridge Random Access Memory Device with Cu/Hfo2/Pt Structure

Investigation on High Resistance Variation of Bi-layer TaO<sub>x</sub>/HfO<sub>2</sub> RRAM Devices

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Ta0x/Hf02-based RRAM with Self-Selective Feature Caused by Current Compliance Modulation

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Justification and Monte Carlo Simulation of Microstructure Evolution Process of Conductive Filament in Reset Transition in Cu/Hfo2/Pt Rram

Study on High-Resistance State Instability of TaOx-Based RRAM