Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Investigation on High Resistance Variation of Bi-layer TaO<sub>x</sub>/HfO<sub>2</sub> RRAM Devices

Investigation on High Resistance Variation of Bi-layer TaO<inf>x</inf>/HfO<inf>2</inf> RRAM Devices

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Study on High-Resistance State Instability of TaOx-Based RRAM

Co-existed Unipolar and Bipolar Resistive Switching Effect of HfOx-based RRAM

Short Time High-Resistance State Instability of TaOx-Based RRAM Devices

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Effect of TiO<inf>x</inf> Film Thickness on Resistive Switching Behavior of TiN/TiO<inf>x</inf>/HfO<inf>2</inf>/Pt RRAM Device

Study of the Set Statistical Characteristics in the Cu/Hfo2/Pt-Based Rram Device

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

The Dependence Of Bottom Electrode Materials On Resistive Switching Characteristics For Hfo2/Tiox Bilayer Structure Rram

Effect Of Tiox Film Thickness On Resistive Switching Behavior Of Tin/Tiox/Hfo2/Pt Rram Device

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Current Compliance Impact on the Variability of HfO2-based RRAM Devices

Experimental Investigation of the Scalability of RRAM Device with Pt/[HfO<inf>x</inf>/AlO<inf>y</inf>]<inf>m</inf>/TiN Structure

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Uniform 3d Vertical Alo Delta/Ta2o5-X/Taoy Rram: Fabrication, Characterization And Mechanism Analysis

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory