Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Physics-Based Analytic Model of Analog Switching Resistive Random Access Memory

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Oxide-based RRAM Switching Mechanism: A New Ion-Transport-recombination Model

Oxide-based RRAM: Requirements and Challenges of Modeling and Simulation

Conductive metal oxide and hafnium oxide bilayer ReRAM: an ab initio study

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Modeling and Design Optimization of ReRAM.

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

A Non-Filamentary Model for Unipolar Switching Transition Metal Oxide Resistance Random Access Memories

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

Physical Model Simulations of Hf Oxide Resistive Random Access Memory Device with a Spike Electrode Structure

Modeling the conduction mechanisms of intrinsic multi-level states in HfO<sub>x</sub>-based resistive random access memory

Reliable Analog Resistive Switching Behaviors Achieved Using Memristive Devices in AlO X /hfo X Bilayer Structure for Neuromorphic Systems

Ab Initio Modeling Of Resistive Switching Mechanism In Binary Metal Oxides

Memristors for Memory and Computing Applications