Abstract:Advancements in artificial intelligence are driving the need for highly parallel and energy‐efficient computing analogous to the human brain. In light of this, recent progresses, challenges, limitations, and future outlooks of multifunctional optoelectronic metal oxide–polymer hybrid composites‐based resistive memory devices are explored, particularly for their perspectives toward artificial synapses for neural networks that can emulate neuromorphic visualization and memorize information. Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed.

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

RRAM based synaptic devices for neuromorphic visual systems

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

Memristive Devices and Networks for Brain‐Inspired Computing

Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems

Ultra-low-energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems.

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

Multicore Spiking Neuromorphic Chip in 180-nm with ReRAM Synapses and Digital Neurons

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Emerging Synaptic Devices: from Two-Terminal Memristors to Multiterminal Neuromorphic Transistors

Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Reconfigurable Optoelectronic Memristor for In-Sensor Computing Applications

Optoelectronic resistive random access memory for neuromorphic vision sensors

Neuromorphic Computing Based on Resistive RAM.

Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System