Abstract:In-memory logic calculations and brain-inspired artificial synaptic neuromorphic computing are expected to solve the limitations of the traditional von Neumann computing architecture. The data processing efficiency of the traditional von Neumann architecture is inherently limited by its physically separated processing and storage units, and thus data transmission besides calculation leads to a limited calculation speed and additional high-power consumption. In addition, traditional digital logic calculations and analog calculations have greater limitations in conversion. Herein, we report a flexible two-terminal memristor based on SiCO:H, which is a porous low-k back-end complementary metal-oxide-semiconductor (CMOS)-compatible material. Due to its low operating voltage (200 mV) and fast response speed (100 ns), it could perform digital memory calculation and neuromorphic calculation simultaneously. The memristor could realize a transition from short-term to long-term plasticity in the process of enhancement and inhibition during neuromorphic calculation, with high biological reality. In digital logic calculations, IMP-based and MAGIC-based logic calculations were verified. In neuromorphic computing, an Ag ion-based conductive filament was introduced. The relationship between the temporal dynamics of the conductance evolution and the diffusive dynamics of the Ag active metal could be modulated by the external programming electric field strength. The synapses and neuron dynamics in biology were faithfully simulated, realizing a transition from short-term to long-term plasticity in the process of enhancement and inhibition, which has high compatibility and scalability, proposing a novel solution for the next generation of computer architectures.

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A Physics-Oriented Memristor Model with the Coexistence of NDR Effect and RS Memory Behavior for Bio-Inspired Computing

Memristive brain-like computing

A Brain-Inspired In-Memory Computing System for Neuronal Communication Via Memristive Circuits.

Metallopolymeric Memristor Based Artificial Optoelectronic Synapse for Neuromorphic Computing

CMOS Compatible Bio-Realistic Implementation with Ag/HfO2-Based Synaptic Nanoelectronics for Artificial Neuromorphic System

Memristors: Understanding, Utilization and Upgradation for Neuromorphic Computing

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Self-rectifying-based Memristors for Neuromorphic Computing.

Diverse Long-Term Potentiation and Depression Based on Multilevel LiSiOxmemristor for Neuromorphic Computing.

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Hybrid CMOS-Memristor synapse circuits for implementing Ca ion-based plasticity model

Flexible Boron Nitride-Based Memristor Forin Situdigital and Analogue Neuromorphic Computing Applications

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Diverse long-term potentiation and depression based on multilevel LiSiOx memristor for neuromorphic computing

Memristors with Diffusive Dynamics As Synaptic Emulators for Neuromorphic Computing

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

Memristor-Based Neuromorphic System With Content Addressable Memory Structure