Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

ReRAM Write Circuit with Dynamic Uniform and Small Overshoot Compliance Current under PVT Variations.

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

A 0.13 Μm 8 Mb Logic-Based Cu $_{\rm X}$si $_{\rm Y}$o ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction

Reliability significant improvement of resistive switching memory by dynamic self-adaptive write method

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

Optimization of Periphery Circuits in a 1K-Bit PCRAM Chip for Highly Reliable Write and Read Operations.

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

A 128kb Hfo2 Reram with Novel Double-Reference and Dynamic-Tracking Scheme for Write Yield Improvement

A ReRAM-based 10T2R SRAM Using Power-off Recovery Function for Reducing Power

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

Resistance Switching for RRAM Applications.

On-Chip Write & Verify and Endurance Enhancer Circuits Towards Multi-level RRAM Array

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

Technology and circuit optimization of resistive RAM for low-power, reproducible operation