Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

A 0.13 Μm 8 Mb Logic-Based Cu $_{\rm X}$si $_{\rm Y}$o ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

A 9-Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7-Ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

An Error-Free 64KB ReRAM-Based Nvsram Integrated to a Microcontroller Unit Supporting Real-Time Program Storage and Restoration

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

A 1-Mb Programming Configurable ReRAM Fully Integrating into a 32-Bit Microcontroller Unit.

A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications

BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic

Logic-Based Mega-Bit CuxSiyO emRRAM with Excellent Scalability Down to 22nm Node for post-emFLASH SOC Era

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation