Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

A 0.13 Μm 8 Mb Logic-Based Cu $_{\rm X}$si $_{\rm Y}$o ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction

A 0.13μm 8Mb logic based Cu xSi yO resistive memory with self-adaptive yield enhancement and operation power reduction

A 0.13µm 8Mb logic based Cu<inf>x</inf>Si<inf>y</inf>O resistive memory with self-adaptive yield enhancement and operation power reduction

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

ReRAM Write Circuit with Dynamic Uniform and Small Overshoot Compliance Current under PVT Variations.

A 0.75 V Reference Clamping Sense Amplifier for Low-Power High-Density ReRAM with Dynamic Pre-Charge Technique

Logic-Based Mega-Bit CuxSiyO emRRAM with Excellent Scalability Down to 22nm Node for post-emFLASH SOC Era

A 1Mb RRAM Macro With 9.8ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

Reliability significant improvement of resistive switching memory by dynamic self-adaptive write method

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Design and Implementation of a Hybrid, ADC/DAC-Free, Input-Sparsity-Aware, Precision Reconfigurable RRAM Processing-in-Memory Chip

A 1.041-Mb/mm 2 27.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

A 1-Mb Programming Configurable ReRAM Fully Integrating into a 32-Bit Microcontroller Unit.