Abstract:With decreasing die size and the ability to store multiple bits in a single cell, resistive random access memory (ReRAM) can be used to increase storage density, making it a promising technology for the next generation of memory. However, multi-level write operations suffer from impairments such as large latency, high energy consumption, and reliability issues. In this paper, we study different mechanisms affecting the "multi-level incremental step pulse with verify algorithm" (M-ISPVA) on a 1-transistor-1-resistor (1T1R) model in transient simulation at the component and the circuit level with focus on resistance control and energy consumption during the entire process of state transitions. By dividing the M-ISPVA into a triggering and a controlling period, we discovered the transistor to operate in the ohmic region during the triggering period as a voltage-controlled resistance and in the saturation region during the controlling period as a voltage-controlled current limiter. Controlling the gate voltage in the triggering period can move the triggering point to a desired write voltage and in the controlling period can increase or decrease resistance steps per pulse to attain a desired speed of resistance change. In addition, the major energy portion is consumed for reset operation during triggering and for set operation during the controlling period. To optimize write performance, extra precaution must be taken when defining resistance states with target read-out current and gate voltage with the focus on evenly balanced latencies between all transitions. A direct multi-level write operation shows 67.5 % latency and 62.5 % energy saving compared to indirect ones, but suffers from only unidirectional control, making it non-feasible. In case of a 4 k bit memory, the more reliable M-ISPVA faces almost 37 % higher latency and energy compared to the basic ISPVA.

ReRAM Write Circuit with Dynamic Uniform and Small Overshoot Compliance Current under PVT Variations.

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

A 0.13 Μm 8 Mb Logic-Based Cu $_{\rm X}$si $_{\rm Y}$o ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction

Reliability significant improvement of resistive switching memory by dynamic self-adaptive write method

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

Design and Implementation of RRAM Voltage Supply Circuits

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

Conduction mechanisms, dynamics and stability in ReRAMs

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

Optimization Of Writing Scheme On 1t1r Rram To Achieve Both High Speed And Good Uniformity

A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

Optimizing multi-level ReRAM memory for low latency and low energy consumption

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Technology and circuit optimization of resistive RAM for low-power, reproducible operation