Abstract:Resistive random access memory (RRAM), a new non-volatile memory, enables hardware accelerators based on in-memory computing with improved throughput and energy efficiency, enabling machine learning on-the-fly inference at the edge. However, sneak-path currents in RRAM crossbar arrays (CBAs) can cause crosstalk, limiting high-density applications. The best choice for suppressing leakage current is self-rectifying RRAM (SRR). Interface-type RRAMs offer CMOS compatibility, better controllability, higher reliability, and lower power consumption compared to filament-type counterparts. However, while there is much research on the filament-type RRAMs, there is little research and no measurement validation on the interface-type RRAMs. In this paper, a compact model of the interface-type RRAM is developed for circuit and system exploration. The model includes Schottky barrier diode, effective layer resistance, nano-battery effect, parasitic resistance, and capacitance. It also has a dynamic behavior model, including device-to-device variation, retention, and endurance. Compared with measurements, it reproduces high accuracy of 98.97% in DC and 98.05% in AC. The proposed model is applied to a neuromorphic $64\times64$ SRR CBA with 32-bit fixed-point precision. A nano-battery bias scheme is also proposed to zero the current of RRAMs having non-zero I-V crossing points, reducing the sneak-pass current error to 0.02%. A vector matrix multiplication application demonstrates 3.44 TOPS/W with a 50:50 LRS to HRS ratio, and a deep neural network on a VGG-8 architecture using the CIFAR-10 dataset observes an accuracy degradation of 1.36%.

Technology and circuit optimization of resistive RAM for low-power, reproducible operation

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

A Novel Programming Method for Multilevel RRAM Based on Pulse Width Modulation

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Progress in Development of Resistive RAM Peripheral Circuit

A 16 Mb Rram Test Chip Based on Analog Power System with Tunable Write Pulses

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control

A Novel Read Circuit for RRAM Based on RC Delay Effect

Improving the Resistive Switching Reliability Via Controlling the Resistance States of Rram

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Design and Implementation of RRAM Voltage Supply Circuits

Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM Devices for Neuromorphic Applications

A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation