Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

Design and Implementation of RRAM Voltage Supply Circuits

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

Progress in Development of Resistive RAM Peripheral Circuit

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

A Novel Read Circuit for RRAM Based on RC Delay Effect

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

Resistive Random Access Memory for Future Information Processing System.

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

Resistive RAM:A Novel Generation Memory Technology

Improvement of RRAM Device Performance Through On-Chip Resistors

A 1Mb RRAM Macro With 9.8ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation

A Self-Terminated Operation Scheme for High-Parallel and Energy-Efficient Forming of RRAM Array

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

Novel RRAM Programming Technology for Instant-on and High-Security FPGAs

Hybrid CMOS/Memristor Circuit Design Methodology

Technology and circuit optimization of resistive RAM for low-power, reproducible operation

A Self-Adaptive Write Driver with Fast Termination of Step-Up Pulse for Reram