Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

A 1Mb RRAM Macro With 9.8ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

Fault Measurability Design of the RRAM Based on 1T1R Structure

Highly Area-Efficient Low-Power SRAM Cell with 2 Transistors and 2 Resistors

A Self-Terminated Operation Scheme for High-Parallel and Energy-Efficient Forming of RRAM Array

Improving Reliability of Non-Volatile Memory Technologies Through Circuit Level Techniques and Error Control Coding

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

8T1R: A Novel Low-power High-speed RRAM-based Non-volatile SRAM Design.

A Low Cost Multi-Tiered Approach to Improving the Reliability of Multi-Level Cell Pram

A Novel Capacitor-based Stateful Logic Operation Scheme for In-memory Computing in 1T1R RRAM Array

A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current

RRAM Repair Scheme Based on RRAM Cell Characteristics

ASAP: an Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell

Write–Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge