RRAM Repair Scheme Based on RRAM Cell Characteristics

Li Meng,Chen Gang,Lin Yinyin
DOI: https://doi.org/10.3969/j.issn.1003-353x.2012.02.014
2012-01-01
Abstract:A novel RRAM repair scheme based on its cell characteristics that it's in the high resistance state after manufacture and in the low resistance state after a forming process was presented to solve the low yield problem.Using such a RRAM cell as the error-director bit and a redundant cell as the repair bit,three different structures were demonstrated to implement the repair scheme.By using different organizations,the three structures achieved different repair RRAM usage efficiencies.Finally,through mathematical analysis,it is proved that the RRAM's error rate could be reduced by 10 to 30 times only using a small amount of redundant cells.
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