Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

RRAM Refresh Circuit

RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO<inf>2</inf>/Hf 1T1R RRAM memory cell

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

1T2R: A Novel Memory Cell Design to Resolve Single-Event Upset in RRAM Arrays

Proposing a Solution for Single-Event Upset in 1T1R RRAM Memory Arrays

A Study of the Effect of RRAM Reliability Soft Errors on the Performance of RRAM-Based Neuromorphic Systems

Mitigating the Effect of Reliability Soft-errors of RRAM Devices on the Performance of RRAM-based Neuromorphic Systems

Analysis of RRAM Reliability Soft-Errors on the Performance of RRAM-Based Neuromorphic Systems.

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

An RRAM Retention Prediction Framework Using a Convolutional Neural Network Based on Relaxation Behavior

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

8T1R: A Novel Low-power High-speed RRAM-based Non-volatile SRAM Design.

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

On-Chip Write & Verify and Endurance Enhancer Circuits Towards Multi-level RRAM Array

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Theory Study and Implementation of Configurable ECC on RRAM Memory.

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology