Abstract:One of the most attractive types of novel nonvolatile memory concepts is resistive random access memory (ReRAM) based on a reversible ("soft") dielectric breakdown effect. The interest is caused by combining simple architecture with promising performance: excellent scalability, nanosecond speed, long data retention, and low power consumption. However, the commercialization of this type of memory is retarded mainly due to serious drawbacks: high cell-to-cell variability of switching parameters and limited endurance related to the ionic origin of resistive switching effect coupled with the problem of voltage overshooting. In particular, these issues complicate the examination of test samples because during the lifespan of memory cells, and the permanent reselection of test switching parameters is required. This challenge can be overcome by developing a measurement technique that combines careful testing of every single structure and the ability to test a large number of test structures. As such a technique, we propose an automated testing algorithm that automatically avoids voltage overshooting and provides an effective way of characterization of cell-to-cell and cycle-to-cycle variability. It includes all stages of ReRAM cell operation, specifically electroforming, dc switching, and endurance testing in the pulsed mode. The developed technique allows on-the-fly restoring of the memory window in case of its degradation, making it possible to better understand the potential of the material stacks of the memory cell.

Fault Measurability Design of the RRAM Based on 1T1R Structure

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Design and Realization of a 0.13 Μm 1 Mb Resistive Random Access Memory

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

Design and Implementation of RRAM Voltage Supply Circuits

Investigation of the Forming Program Failture in 1T1R Structure

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array

Electrical and testing reliability of CuxO based RRAM

Hardware Fault Tolerance for Binary RRAM Crossbars

Testing of 1tnr RRAM Array with Sneak Path Technique

Compact Reliability Model of Analog RRAM for Computation-in-Memory Device-to-System Codesign and Benchmark

A 16 Mb Rram Test Chip Based on Analog Power System with Tunable Write Pulses

Stuck-at Fault Tolerance in RRAM Computing Systems.

RRAM Repair Scheme Based on RRAM Cell Characteristics

A Novel Read Circuit for RRAM Based on RC Delay Effect

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model