Abstract:The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I – V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

Testing of 1tnr RRAM Array with Sneak Path Technique

Sneak-path based test for 3D stacked one-transistor-N-RRAM array

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip

Novel 3D Horizontal RRAM Architecture with Isolation Cell Structure for Sneak Current Depression.

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell.

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

Resistive Switching Memory for High Density Storage and Computing*

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

A Novel Read Circuit for RRAM Based on RC Delay Effect

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Size analysis of multilevel RRAM array and optimization of device and circuit characteristics

Progress in Rectifying-Based RRAM Passive Crossbar Array